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| Datasheet File OCR Text: |
| NTE226 Germanium PNP Transistor Audio Power Amp Description: The NTE226 is a Germanium PNP transistor in a TO66 type package designed for high-fidelity, high- power output applications. Absolute Maximum Ratings: Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Collector-Emitter Voltage (RBE = 100), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Power Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +85C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +85C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Small-Signal Current Gain Resistance Base Spreading Resistance Symbol ICBO IEBO hFE fob rbb Test Conditions VCB = 25V, IE = 0 VEB = 6V, IC = 0 VCE = 1.5V, IC = 200mA VCE = 1.5V, IC = 200mA VCE = 1.5V, IC = 200mA, f = 6MHz Min Typ Max Unit - - 50 - - - - 0.7 15 200 200 - - A A MHz 100 275 .593 (15.08) Dia .290 (7.36) .031 (.792) .039 (1.0) Dia .295 (7.5) .944 (24.0) Base .530 (13.5) .157 (4.0) Dia (2 Places) .315 (8.0) Collector/Case Emitter |
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